Rajkamal Sir (Engineers Platform) 📚📚

4. Temperature coefficient of resistance in a pure semiconductor is…………….

3. Acceptor impurity atoms in a semiconductor result in new……………[SSC JE EE 2021]

2. When a free electron is recaptured by a hole, the process is called……………… [SSC JE EE 2021]

1. An n-type semiconductor is________[SSC JE EE 2021]

5. Imperfections in the crystal structure result in……………[SSC JE EE 2021]

4. At room temperature intrinsic carrier concentration is higher in germanium than in silicon because………………[SSC JE EE 2021]

3. A hole is the vacancy created when

2. Forbidden energy gap between valence band and conduction band is least in the case of…………….[SSC JE EE 2017]

1. Resistivity of a semiconductor depends on…………….. [SSC JE EE 2017]

5. Donor impurity atom in a semiconductor result in new…………..[SSC JE EE 2017]

4. Change of carrier concentration along the length of a semiconductor is called………………[SSC JE EE 2017]

3. In a semiconductor, movement of charge carriers under influence of an electric field is called[SSC JE EE 2017]

2. In pure silicon, a major part of the drift current is due to free electrons because of………………….[SSC JE EE 2017]